MMFT3055VT1

Product Summary

The MMFT3055VT1 is a N–Channel Enhancement–Mode Silicon Gate. The MMFT3055VT1 is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, the MMFT3055VT1 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Parametrics

MMFT3055VT1 absolute maximum ratings: (1)Drain–to–Source Voltage : 60 Vdc; (2)Drain–to–Gate Voltage (RGS = 1.0 MΩ) : 60 Vdc; (3)Gate–to–Source Voltage – Continuous : ± 20 Vdc; (4)Drain Current – Continuous : 1.7 Adc; (5)Total PD @ TA = 25℃ mounted on 1” sq. Drain pad on FR–4 bd material : 2.0W; (6)Derate above 25℃ : 6.3 mW/℃; (7)Operating and Storage Temperature Range : –55 to 175 ℃; (8)Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25℃ (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 Ω ) : 58 mJ; (9)Thermal Resistance Junction to Ambient on 1” sq. Drain pad on FR–4 bd material : 70 ℃/W; (10)Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material : 88 ℃/W; (11)Junction to Ambient on min. Drain pad on FR–4 bd material : 159 ℃/W; (12)Maximum Lead Temperature for Soldering Purposes, 1/8”, from case for 10 seconds : 260 ℃.

Features

MMFT3055VT1 features: (1)Avalanche Energy Specified; (2)IDSS and VDS(on) Specified at Elevated Temperature; (3)Static Parameters are the Same for both TMOS V and TMOS E-ET; (4)Available in 12 mm Tape & Reel Use MMFT3055VT1 to order the 7 inch/1000 unit reel; (5)Use MMFT3055VT3 to order the 13 inch/4000 unit reel.

Diagrams