Product Summary

The NDT3055 is an N-channel enhancement mode field effect transistor.

Parametrics

NDT3055 absolute maximum ratings: (1)VDSS, Drain-source voltage: 60V; (2)VGSS, gate-source voltage-continuous: ±20V; (3)ID, Maximum drain current, continuous: 4A; pulsed: 25A; (4)PD, maximum power dissipation: 3W; (5)TJ, TSTG, Operating and storage temperature range: -65 to 150℃.

Features

NDT3055 features: (1)4A, 60V. RDS(ON)=0.100Ω @ VGS=10V; (2)High density cell design for extrmemly low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.

Diagrams

NDT3055 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
NDT3055
NDT3055

Fairchild Semiconductor

MOSFET SOT-223 N-CH ENHANCE

Data Sheet

0-1: $0.37
1-25: $0.33
25-100: $0.28
100-250: $0.25
NDT3055_J23Z
NDT3055_J23Z

Fairchild Semiconductor

MOSFET N-Channel FET Enhancement Mode

Data Sheet

Negotiable 
NDT3055L
NDT3055L

Fairchild Semiconductor

MOSFET SOT-223 N-CH LOGIC

Data Sheet

0-1: $0.34
1-25: $0.30
25-100: $0.26
100-250: $0.23
NDT3055L_Q
NDT3055L_Q

Fairchild Semiconductor

MOSFET SOT-223 N-CH LOGIC

Data Sheet

Negotiable