Product Summary
The BSM200GA120DN2 is an IGBT Power module.
Parametrics
BSM200GA120DN2 absolute maximum ratings: (1)Collector-emitter voltage : 1200 V; (2)Gate-emitter voltage : ± 20V; (3)DC collector current : 300A; (4)Pulsed collector current, tp = 1 ms : 600A; (5)Power dissipation per IGBT : 1550W; (6)Chip temperature : 150℃; (7)Storage temperature : -40 to + 125℃.
Features
BSM200GA120DN2 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2S |
Infineon Technologies |
IGBT Transistors 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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